ds30055 rev. a-2 1 of 1 mmbta63 / MMBTA64 mmbta63 / MMBTA64 pnp surface mount darlington transistor epitaxial planar die construction complementary npn types available (mmbta13 / mmbta14) ideal for medium power amplification and switching high current gain characteristic symbol mmbta63 MMBTA64 unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -10 v collector current - continuous (note 1) i c -500 ma power dissipation (note 1) p d 350 mw thermal resistance, junction to ambient (note 1) r q ja 357 k/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a e j l m b c h g d k top view c e b mechanical data case: sot-23, molded plastic terminals: solderable per mil-std-202, method 208 terminal connections: see diagram mmbta63 marking: k2e MMBTA64 marking: k3e weight: 0.008 grams (approx.) sot-23 dim min max a 0.37 0.51 b 1.19 1.40 c 2.10 2.50 d 0.89 1.05 e 0.45 0.61 g 1.78 2.05 h 2.65 3.05 j 0.013 0.15 k 0.89 1.10 l 0.45 0.61 m 0.076 0.178 all dimensions in mm notes: 1. valid provided that terminals are kept at ambient temperature. 2. pulse test: pulse width 300 m s, duty cycle 2%. electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-emitter breakdown voltage v (br)ceo -30 ? v i c = -100 m av be = 0v collector cutoff current i cbo ? -100 na v cb = -30v, i e = 0 emitter cutoff current i ebo ? -100 na v eb = -10v, i c = 0 on characteristics (note 2) dc current gain mmbta63 MMBTA64 mmbta63 MMBTA64 h fe 5,000 10,000 10,000 20,000 ?? i c = -10ma, v ce = -5.0v i c = -10ma, v ce = -5.0v i c = -100ma, v ce = -5.0v i c = -100ma, v ce = -5.0v collector-emitter saturation voltage v ce(sat) ? -1.5 v i c = -100ma, i b = -100 m a base- emitter saturation voltage v be(sat) ? -2.0 v i c = -100ma, v ce = -5.0v small signal characteristics current gain-bandwidth product f t 125 ? mhz v ce = -5.0v, i c = -10ma, f = 100mhz power semiconductor
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